this is information on a product in full production. august 2013 docid024734 rev1 1/9 STTH50W03C turbo 2 ultrafast high voltage rectifier datasheet ? production data features ? ultrafast switching ? low reverse recovery current ? low thermal resistance ? reduces switching losses ? ecopack ? 2 compliant component description the STTH50W03C uses st turbo 2 300 v technology. it is especially suited to be used for dc/dc and dc/ac converters in the secondary stage of mig/mma/tig welding machines. housed in st's to-247, this device offers high power integration for a ll welding machines and industrial applications. k a2 a1 to-247 STTH50W03Cw k a1 a2 table 1. device summary symbol value i f(av) 2 x 25 a v rrm 300 v t rr (typ) 20 ns t j 175 c v f (typ) 1 v www.st.com
characteristics STTH50W03C 2/9 docid024734 rev1 1 characteristics when diodes 1 and 2 are used simultaneously: tj (diode 1) = p (diode 1) x r th(j-c) (per diode) + p (diode 2) x r th(c) to evaluate the conduction loss es use the following equation: p = 0.9 x i f(av) + 0.012 i f 2 (rms) table 2. absolute ratings (limiting value s per diode, at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 300 v i f(rms) forward rms current 40 a i f(av) average forward current, ? = 0.5 t c = 105 c per diode 25 a t c = 100c per device 50 i fsm surge non repetitive forward current t p = 10 ms sinusoidal 200 a t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature + 175 c table 3. thermal resistance symbol parameter value unit r th(j-c) junction to case per diode 1.8 c / w total 1 r th(c) coupling 0.2 table 4. static electrical characteristics per diode symbol parameter test conditions min. typ max. unit i r (1) 1. pulse test: t p = 5 ms, ? < 2% reverse leakage current t j = 25 c v r = v rrm 15 a t j = 125 c 15 150 v f (2) 2. pulse test: t p = 380 s, ? < 2% forward voltage drop t j = 25 c i f = 25 a 1.5 v t j = 150 c 1.0 1.2 t j = 25 c i f = 50 a 1.8 t j = 150 c 1.25 1.5
docid024734 rev1 3/9 STTH50W03C characteristics 9 table 5. dynamic electrical characteristics per diode symbol parameter test conditions min. typ max. unit i rm reverse recovery current t j = 125 c i f = 25 a, v r = 200 v di f /dt = -200 a/s 79 a q rr reverse recovery charge 170 nc s factor softness factor 0.3 t rr reverse recovery time t j = 25 c i f = 1 a, v r = 30 v di f /dt = -100 a/s 20 27 ns t fr forward recovery time t j = 25 c i f = 25 a, v fr = 1.2 v di f /dt = 400 a/s 120 ns v fp forward recovery voltage 2.5 3.6 v figure 1. average forward power dissipation versus average forward current (per diode) figure 2. forward voltage drop versus forward current (typical values, per diode) p f ( av) (w) 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 t =tp/t tp i f(av) (a) = 0.2 = 0.05 = 0.1 =1 = 0.5 0.1 1.0 10.0 100.0 1000.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i f (a) t t = 150 = 25 c c j j v f (v) figure 3. forward voltage drop versus forward current (maximum values, per diode) figure 4. relative variation of thermal impedance junction to case versus pulse duration i f (a) 0.1 1.0 10.0 100.0 1000.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t = 25 j c t = 150 j c v f (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 z th( j - c ) / r th(j-c ) single pulse t p (s)
characteristics STTH50W03C 4/9 docid024734 rev1 figure 5. peak reverse recovery current versus di f /dt (typical values, per diode) figure 6. reverse recovery time versus di f /dt (typical values, per diode) 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 i r m (a) i f = i f(av) v r = 200 v t j = 125 c di f /dt(a/s) 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 350 400 450 500 t rr (ns) i f = i f(av) v r = 200 v t j = 125 c di f /dt(a/s) figure 7. reverse recovery charges versus di f /dt (typical values, per diode) figure 8. reverse recovery softness factor versus di f /dt (typical values, per diode) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450 500 q rr (nc) i f =i f(av) v r =200 v t j =125 c di f /dt(a/s) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 s factor i f =i f(av) v r =200 v t j =125 c di f /dt(a/s) figure 9. relative variations of dynamic parameters versus ju nction temperature figure 10. transient peak forward voltage versus di f /dt (typical values, per diode) 0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 t j (c) i rm s factor q rr i f =i f(av) v r =200 v reference: t j =125 c 0 1 2 3 4 5 200 250 300 350 400 450 500 v fp (v) di f /dt(a/s) i f = i f(av) t j = 125c
docid024734 rev1 5/9 STTH50W03C characteristics 9 figure 11. forward recovery time versus di f /dt (typical values, per diode) figure 12. junction capacitance versus reverse voltage applied (typical values, per diode) 0 20 40 60 80 100 120 140 200 250 300 350 400 450 500 t fr (ns) di f /dt(a/s) i f = i f(av) v r = 1.2 v t j = 125c 10 100 1 10 100 1000 c(pf) f = 1 mhz v osc = 30 mv rms t j = 25c v r (v)
package information STTH50W03C 6/9 docid024734 rev1 2 package information ? epoxy meets ul94, v0 ? cooling method: by conduction (c) ? recommended torque value: 0.5 nm ? maximum torque value: 1.0 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark. figure 13. to-247 dimension definitions f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g = = f(x3)
docid024734 rev1 7/9 STTH50W03C package information 9 table 6. to-247 dimension values ref. dimensions millimeters inches min. typ. max. min. typ max. a 4.85 5.15 0.191 0.203 a1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 d (1) 1. dimension d plus gate prot rusion does not exceed 20.5 mm. 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e 5.30 5.45 5.60 0.209 0.215 0.220 l 14.20 14.80 0.559 0.582 l1 3.70 4.30 0.145 0.169 l2 18.50 typ. 0.728 typ. ? p (2) 2. resin thickness around the mounting hole is not less than 0.9 mm. 3.55 3.65 0.139 0.143 ? r 4.50 5.50 0.177 0.217 s 5.30 5.50 5.70 0.209 0.216 0.224
ordering information STTH50W03C 8/9 docid024734 rev1 3 ordering information 4 revision history table 7. ordering information ordering type marking package weight base qty delivery mode STTH50W03Cw STTH50W03Cw to-247 4.46 g 50 tube table 8. document revision history date revision changes 09-aug-2013 1 first issue.
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